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December 2013
FDD18N20LZ
N-Channel UniFET TM MOSFET
2 00 V, 16 A, 1 25 m Ω
Features
? R DS(on) = 125 m Ω (Typ.) @ V GS = 10 V, I D = 8 A
? Low Gate Charge (Typ. 30 nC)
? Low C RSS (Typ. 25 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Improved Capability
? RoHS Compliant
Description
UniFET TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
Applications
? LED TV
? Consumer Appliances
? Uninterruptible Power Supply
D
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
Symbol
Parameter
FDD18N20LZ
Unit
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
(T C = 25 o C)
- Derate above 25 o C
C
C
V DSS
V GSS
I D
I DM
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current - Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds .
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
200
±20
16
9.6
64
320
16
8.9
10
89
0.7
-55 to +150
300
V
V
A
A
mJ
A
mJ
V/ns
W
W/ o C
o
o
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD18N20LZ
1.4
83
Unit
o C/W
?201 1 Fairchild Semiconductor Corporation
FDD18N20LZ Rev. C1
1
www.fairchildsemi.com
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